Buried structured semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | ITAYA YOSHIO; MOTOSUGI TSUNEJI |
| 发表日期 | 1985-12-12 |
| 专利号 | JP1985251686A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried structured semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To manufacture a buried laser having narrow active-layer width by a method wherein a mesa having an active layer having width narrower than a clad layer is shaped under the thin clad layer, the clad layer is melted, the active layer is buried, both sides of the mesa is buried by a current blocking layer and a current confinement layer and a layer is grown so as to cover the whole. CONSTITUTION:An N type InP buffer layer 1, an undoped GaInAsP active layer 2 and a P type InP clad layer 3 are grown onto an N type InP substrate through a liquid-phase epitaxial method. An silicon nitride film is attached onto a grown surface, and the stripes 4 of the silicon nitride film are formed in the 110 direction. Sections up to a section under the active layer 2 are etched to shape a mesa region. The silicon nitride film is removed, and the active layer 2 is buried through a substance transport method. A P type InP current blocking layer 4 and an N type InP current confinement layer 5 are formed. A P type InP clad layer 6 and a P type GaInAsP cap layer 7 are grown. The substrate 1 side is ground, and an electrode 8 and an electrode 9 are shaped. |
| 公开日期 | 1985-12-12 |
| 申请日期 | 1984-05-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64018]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | ITAYA YOSHIO,MOTOSUGI TSUNEJI. Buried structured semiconductor laser and manufacture thereof. JP1985251686A. 1985-12-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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