Manufacture of semiconductor
文献类型：专利
| 作者 | KURODA TAKARO; WATANABE AKISADA; MIYAZAKI TAKAO; NAKAMURA HITOSHI; MATSUMURA HIROYOSHI |
| 发表日期 | 1987-11-12 |
| 专利号 | JP1987260314A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor |
| 英文摘要 | PURPOSE:To enable uniform and smooth groove shapes to be formed with reproducibility and enable diffraction graings to be preserved, by making an InGaAsP-group four-element layer, which has composition of super-thin GaAs or nearly of GaAs, grow on an InP substrate by MOCVD and MBE methods and then forming grooves by a normal four-diffracted graing formation method. CONSTITUTION:Super-thin film 2 of an InGaAsP-group four-element mixed crystal having composition of GaAs, whose thickness is lowered below a critical state of generating mis-fit transition or having composition nearly of GaAs is made to grow on an InP substrate or its epitaxial layer 1, and then photo resists 3 are formed in periodical line shapes by interference exposure method, and only GaAs is first removed by method of selectively etching GaAs and InP. Thereafter, diffraction grating grooves are formed by using 25 deg.C liquids of HBr:RNO3:H2O:1:1:5, which are normally used for forming grooves on the InP substrate. When MOCVD method was used, or high-temperature heat treatment was similarly performed just until liquid vapor epitaxy has started, nearly original shapes were found to be maintained even if GaAs cover crystal was not used as before. That was because GaAs 2 remaining on the groove-vertex projecting parts gave the same action as the cover crystal. |
| 公开日期 | 1987-11-12 |
| 申请日期 | 1986-05-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64044]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KURODA TAKARO,WATANABE AKISADA,MIYAZAKI TAKAO,et al. Manufacture of semiconductor. JP1987260314A. 1987-11-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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