Liquid epitaxial growth method
文献类型：专利
| 作者 | SASAI YOUICHI; ISHINO MASATO; SHIBATA ATSUSHI |
| 发表日期 | 1984-08-02 |
| 专利号 | JP1984134822A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid epitaxial growth method |
| 英文摘要 | PURPOSE:To contrive to improve the accuracy of a matching key by a method wherein an insulator pattern in form of having a clearance parallel with the direction of the sliding of growing solution or a substrate is provided on the substrate for liquid phase growth, thus the pattern decided as the matching key for growth. CONSTITUTION:A pair of recessed patterns of SiO2 films 14 are formed in parallel with the direction of the sliding 15 of the substrate 1 or the solution for liquid phase growth on the substrate, and the clearance 16 is provided. The wipe-off of the solution is improved by this clearance, melt remnant 17 further reduces, and the SiO2 pattern can be detected with good accuracy in the surface of the substrate 1 and that of the grown layer. |
| 公开日期 | 1984-08-02 |
| 申请日期 | 1983-01-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64050]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | SASAI YOUICHI,ISHINO MASATO,SHIBATA ATSUSHI. Liquid epitaxial growth method. JP1984134822A. 1984-08-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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