Multi-wavelength oscillation laser
文献类型：专利
| 作者 | NANBARA SEIJI; YAMASHITA KOJI |
| 发表日期 | 1991-03-19 |
| 专利号 | JP1991064086A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multi-wavelength oscillation laser |
| 英文摘要 | PURPOSE:To obtain a multi-wavelength oscillation laser monolithically having two or more oscillation wavelengths by forming an active layer in a quantum well structure by a molecular beam epitaxial(MBE) method, and varying the thickness of a well layer on two or more independent stripes by using a growing region limiting mask. CONSTITUTION:A region in which crystals can be grown by an MBE beam 5 is limited by using a growth region limiting mask 4 and a quantum well structure active layer 3 is formed by using the beam 5. Then, the mask 4 is laterally shifted, a MBE growing time is altered to sequentially form regions having different well thickness 8 of the layer 3. A part 7 to be removed by etching of the regions having different thickness 8 is removed by etching to monolithically form a multi-wavelength oscillation laser having two or more semiconductor lasers which has different thicknesses 8, i.e., different oscillation wavelengths. |
| 公开日期 | 1991-03-19 |
| 申请日期 | 1989-08-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64051]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NANBARA SEIJI,YAMASHITA KOJI. Multi-wavelength oscillation laser. JP1991064086A. 1991-03-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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