Photoelectronic integrated circuit and manufacturing method thereof
文献类型：专利
| 作者 | OE KUNISHIGE |
| 发表日期 | 1991-01-21 |
| 专利号 | JP1991012984A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photoelectronic integrated circuit and manufacturing method thereof |
| 英文摘要 | PURPOSE:To make it possible to reduce a parasitic capacity and make quick motion by injecting the electric current of semiconductor laser transversely into two adjoining grooves bored to an active layer by way of a p type electrode layer and an n type electrode layer which have made an embedded growth respectively. CONSTITUTION:This circuit comprises an Fe dope InP semi-insulation substrate 1, high resistance InP clad layers 2 and 6, a GaInAsP current guide layers 3 and 5, a GaInAs active layer 4, a non-dope GaInAs channel layer 7, an AlInAs/Si dope electric charge supply layer 8, an n type InP electrode layer 9, a p type InP electrode layer 10, a p type GaInAsP cap layer 11, an n type electrode 12, a p type electrode 13, an electric field effect transistor drain electrode, gate electrode, and source electrodes 14 to 16. The electric current of semiconductor laser is injected transversely into two adjoining grooves by way of the p type electrode layer 9 and the n type electrode layer 10 which have made an embedded growth respectively. It is, therefore, possible to reduce a parasitic capacity and operate at very fast speed as well. |
| 公开日期 | 1991-01-21 |
| 申请日期 | 1989-06-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64062]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | OE KUNISHIGE. Photoelectronic integrated circuit and manufacturing method thereof. JP1991012984A. 1991-01-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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