Semiconductor integrated light emitting device
文献类型：专利
| 作者 | SUZUKI MASATOSHI; AKIBA SHIGEYUKI; TANAKA HIDEAKI; KUSHIRO YUKITOSHI |
| 发表日期 | 1988-08-02 |
| 专利号 | JP1988186488A |
| 著作权人 | 国際電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor integrated light emitting device |
| 英文摘要 | PURPOSE:To obtain a semiconductor integrated light emitting device enabling light from light emitting waveguide paths including a light emitting layer to efficiently be guided to an external waveguide path by providing a stacking in the vicinity of the place wherein the light emitting and waveguide paths including the light emitting layer and the external waveguide path directly connected thereto are directly connected. CONSTITUTION:In a semiconductor integrated light emitting device having light emitting waveguide paths 2, 3 including a light emitting layer 3 and an external waveguide path 4 that is directly connected to the light emitting waveguide paths 2, 3, a stacking is provided in the vicinity of the place where the light emitting waveguide paths 2, 3 and the external waveguide path 4 are directly connected. For instance, after performing the crystal growth of an n-InGaAsP waveguide layer 2, an InGaAsP light emitting layer 3 and a p-InP layer 5 on a n-InP substrate 1, the region for forming the external waveguide path is etched away, and a n-InGaAsP waveguide path layer 4,, a n-InP layer 6 and the p-InP layer 5 are grown on the whole surface. Then, after etching away the grown layers 4, 6, 5 on the light emitting waveguide paths 2, 3, the p-InP layer 5 and a p-InGaAsP cap layer 7 are grown on the whole. |
| 公开日期 | 1988-08-02 |
| 申请日期 | 1987-01-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64070]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 国際電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | SUZUKI MASATOSHI,AKIBA SHIGEYUKI,TANAKA HIDEAKI,et al. Semiconductor integrated light emitting device. JP1988186488A. 1988-08-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。