Compound semiconductor light emitting element
文献类型：专利
| 作者 | KITAGAWA MASAHIKO; TOMOMURA YOSHITAKA; NAKANISHI KENJI |
| 发表日期 | 1992-02-28 |
| 专利号 | JP1992063479A |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Compound semiconductor light emitting element |
| 英文摘要 | PURPOSE:To perform a high intensity light emitting element having a visible short wavelength (blue-ultraviolet) light by forming a semiconductor substrate of compound semiconductor and a current injection part of compound semiconductor containing at least Be and Te as component elements. CONSTITUTION:A semiconductor substrate 1 is formed of compound semiconductor, and a current injection part 2 is formed of compound semiconductor containing at least Be (beryllium) and Te (tellurium) as component elements. In this case, since characteristic containing conductivity of the current injection layer 2 relatively scarcely depending upon a defect in an epitaxially grown layer, desired (low resistance, etc.) characteristic can be easily obtained, and the band gap of the layer 2 is sufficiently larger than that of the light emitting layer 1 without respect to light emitting characteristic, but its band gap can be increased larger than that of the layer Thus, an injection efficiency can be greatly improved. Thus, a light emitting element having a high intensity blue light emitting diode can be manufactured. |
| 公开日期 | 1992-02-28 |
| 申请日期 | 1990-07-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64071]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | KITAGAWA MASAHIKO,TOMOMURA YOSHITAKA,NAKANISHI KENJI. Compound semiconductor light emitting element. JP1992063479A. 1992-02-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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