Photoelectron integrated circuit and manufacture thereof
文献类型：专利
| 作者 | TSUJII HIRAAKI; ONAKA SEIJI; SASAI YOICHI; SHIBATA ATSUSHI |
| 发表日期 | 1988-12-06 |
| 专利号 | JP1988299375A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photoelectron integrated circuit and manufacture thereof |
| 英文摘要 | PURPOSE:To provide a base layer having a uniform thickness, by utilizing a semi-insulating semiconductor for a substrate, constructing a laser such that both the electrodes thereof can be extracted from the surface of the substrate, and depositing all the layers required before the formation of the projection of the laser. CONSTITUTION:On a substrate, namely a semi-insulating substrate 101, an N-type layer 103, which is used not only as an N-type clad layer of a laser but also as a collector layer of a transistor in epitaxially grown. An active layer 104 and a P-type photoconductive layer 105 of the laser are further deposited on the layer 103. The active layer 104 and the P-type photoconductive layer 105 are also used as a part of a collector layer and a base layer of the transistor, respectively. An emitter layer 106 is then formed selectively, whereby all the layers required for the transistor are completed. A P-type clad layer 111 of the laser is formed in stripes on the other parts of the photoconductive layer 105 to complete the construction of the laser. |
| 公开日期 | 1988-12-06 |
| 申请日期 | 1987-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64078]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TSUJII HIRAAKI,ONAKA SEIJI,SASAI YOICHI,et al. Photoelectron integrated circuit and manufacture thereof. JP1988299375A. 1988-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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