中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Multilayer liquid-phase epitaxial growth method

文献类型:专利

作者KISHI YUTAKA; NAKAJIMA KAZUO; YAMAZAKI SUSUMU
发表日期1983-11-08
专利号JP1983191429A
著作权人FUJITSU KK
国家日本
文献子类发明申请
其他题名Multilayer liquid-phase epitaxial growth method
英文摘要PURPOSE:To remove melt backs in a defect section and an edge growth section, to improve yield as a whole and to reduce a misfit dislocation by extracting a section to be grown once at the stage of a four-element layer, completely removing the defect section and the edge growth section and growing InP again. CONSTITUTION:The temperatures of an InP substrate 1 and a boat, to which a perdetermined melt is changed, are elevated in hydrogen gas, they are left as they are kept at fixed temperature and their temperatures are dropped, growth is started, and an InP buffer layer 2, an In0.53Ga0.47As layer 3 and an InGaAsP layer 4 are liquid-grown on the InP substrate 1 in succession. A wafer, the edge growth section thereof is removed at a section separating from an end by 2mm. is removed and the larger defect section not grown thereof is removed, is treated through etching, and set to the boat again, and an InP crystal is grown on the InGaAsP epitaxial layer of InP substrate/InP buffer layer/In0.53Ga0.47As layer/ InGaAsP layer structure from an InP solution. Accordingly, an InP/four element/ three element/InP substrate wafer in which the melt backs are prevented completely is obtained.
公开日期1983-11-08
申请日期1982-05-06
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/64082]  
专题半导体激光器专利数据库
作者单位FUJITSU KK
推荐引用方式
GB/T 7714
KISHI YUTAKA,NAKAJIMA KAZUO,YAMAZAKI SUSUMU. Multilayer liquid-phase epitaxial growth method. JP1983191429A. 1983-11-08.

入库方式: OAI收割

来源:西安光学精密机械研究所

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