Photosemiconductor element and optical bistable element
文献类型：专利
| 作者 | SUGIMOTO MITSUNORI |
| 发表日期 | 1989-09-22 |
| 专利号 | JP1989238632A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photosemiconductor element and optical bistable element |
| 英文摘要 | PURPOSE:To enable high-speed operation while incident power is small by laminating respective required layers on a semiconductor substrate and satisfying the prescribed conditions with the energy Ew between the 1st levels of electrons and holes and forbidden band width Eg of the quantum well layer. CONSTITUTION:The resonance tunnel barrier structure consisting of an (n)-type clad layer 1, an (n)-type light guide layer 2, a 1st spacer layer 3, a thin 1st barrier layer 4, and the quantum well layer 5 having the forbidden band width narrower than the forbidden band width of the layer 4 and the photosemiconductor element of the similar conduction type laminated with a (p)-type barrier layer 6, a 2nd spacer layer 7, a guide layer 8, a clad layer 9, etc., are laminated on a GaAs substrate 10 to form the photosemiconductor element. The energy Ew and the width Eg are so selected as to satisfy the conditions expressed by the formula. The photosemiconductor element operates with a small operating voltage and large current as a bistable element when a load resistor 14 larger than the differential load resistor of the photosemiconductor element and a power supply 15 are connected in series to (p) side and (n) side electrodes 12, 13. The resistance 14 is thereby lowered and the time constant is decreased; in addition, light is confined in the quantum well barrier by the layers 2, 8, by which the operating speed is increased while the incident power is small. |
| 公开日期 | 1989-09-22 |
| 申请日期 | 1988-03-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64094]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SUGIMOTO MITSUNORI. Photosemiconductor element and optical bistable element. JP1989238632A. 1989-09-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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