Embedding type compound semiconductor light emitting device and manufacture thereof
文献类型：专利
| 作者 | TACHIKAWA MASAMI; MORI HIDEFUMI; NAKANO YOSHINORI |
| 发表日期 | 1992-08-31 |
| 专利号 | JP1992242981A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Embedding type compound semiconductor light emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain higher light-emission efficiency by a method wherein a fourth semiconductor layer formed with atom-layer epitaxial growth method is inserted between a first semiconductor lamination body and a semi--insulation semiconductor layer. CONSTITUTION:Between a semiconductor lamination body 2 and a semi- insulation semiconductor layer 11, a semiconductor layer 10 is inserted being formed with the atom-layer epitaxial growth method where impurities that provides a conduction type consisting of InP is not introduced intentionally or, even if introduced, impurities that provides p-type is introduced only with low density. Even if an electrode layer 13 passes over the semiconductor layer 10 to extend to the surface of the semi-insulation semiconductor layer 11, it is possible to narrowly feed current to the mesa section 3 of the semiconductor lamination body 2 so that the light-emission within the mesa 3 can be effectively obtained. |
| 公开日期 | 1992-08-31 |
| 申请日期 | 1991-01-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64101]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | TACHIKAWA MASAMI,MORI HIDEFUMI,NAKANO YOSHINORI. Embedding type compound semiconductor light emitting device and manufacture thereof. JP1992242981A. 1992-08-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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