Light emitting element and manufacture thereof
文献类型：专利
| 作者 | KOBAYASHI MASAMICHI; NAKA HIROSHI; SAWAI MASAAKI; ICHIKI MASAHIRO |
| 发表日期 | 1986-02-10 |
| 专利号 | JP1986029184A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Light emitting element and manufacture thereof |
| 英文摘要 | PURPOSE:To enhance the manufacturing yield by disposing the peripheral edge except part of a cleaved surface of the uppermost layer of an electrode in coincidence with or inside the peripheral edge of the lower layer for supporting the uppermost layer. CONSTITUTION:A laser chip is formed of a multilayer grown layer 6 sequentially formed with a buffer layer 2 made of an N type InP, an active layer 3 made of InGaAsP, a clad layer 4 made of P type InP, and a cap layer 5 made of P type InGaAsP in a stripe shape on the main surface of an N type InP substrate A blocking layer 7 made of P type InP, a buried layer 8 made of N type InP, and a cap layer 9 made of InGaAs are buried at both sides of the layer 6. The main surface side of the substrate 1 is coated with an insulating film 10 except the electrode contact region of the layer 6. An Au layer 12 of the upper layer of an anode electrode 13 is effectively placed on a Cr layer 1 Thus, the layer 12 is not short-circuited due to the contact with a P-N junction presented on the peripheral surface of the laser chip. |
| 公开日期 | 1986-02-10 |
| 申请日期 | 1984-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64106]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KOBAYASHI MASAMICHI,NAKA HIROSHI,SAWAI MASAAKI,et al. Light emitting element and manufacture thereof. JP1986029184A. 1986-02-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。