Buried type semiconductor laser
文献类型：专利
| 作者 | TODOROKI SATORU; OOBE ISAO |
| 发表日期 | 1985-08-08 |
| 专利号 | JP1985150681A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried type semiconductor laser |
| 英文摘要 | PURPOSE:To evaluate the state of the interface of a buried layer directly, to remove a secular unstable element previously and to lengthen life by using electrodes separately formed to the buried layer and a P type clad layer. CONSTITUTION:An N type InP clad layer 2, an N type or P type InGaAsP active layer 3 having forbidden band width smaller than the clad layer 2, a P type InP clad layer 4 and a P type InGaAsP cap layer 5 are laminated on an N type InP substrate The cap layer 5, the clad layer 4, the active layer 3 and one part of the clad layer 2 are removed through chemical etching while leaving predetermined width, and buried layers 6 to which a P-N junction consisting of InP as the same semiconductor material as the clad layer 2 or 4 are buried and laminated. A P diffusion layer 7, width thereof is wider than the clad layer 4 and depth thereof reaches to one part of the clad layer 4, is formed, insulating layers 8 containing the boundary of the diffusion layer 7 and having prescribed width are shaped on the surface of the buried layers 6, electrodes 9, 10 are each formed on the surfaces of the buried layers 6 and the diffusion layer 7, and an electrode 11 is formed on the back of the substrate |
| 公开日期 | 1985-08-08 |
| 申请日期 | 1984-01-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64109]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | TODOROKI SATORU,OOBE ISAO. Buried type semiconductor laser. JP1985150681A. 1985-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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