Manufacture of optoelectronic integrated circuit
文献类型：专利
| 作者 | UENOYAMA TAKESHI; SASAI YOICHI; KIMURA SOICHI; SHIBATA ATSUSHI |
| 发表日期 | 1987-06-10 |
| 专利号 | JP1987128586A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of optoelectronic integrated circuit |
| 英文摘要 | PURPOSE:To manufacture an optoelectronic integrated circuit containing a semiconductor laser which is not ristricted by a resonator length by a method wherein, when at least one of the resonator end surfaces of the semiconductor laser is formed, a groove surrounding the semiconductor laser is formed and a metal film is deposited over the whole surface of a substrate and then the metal film is removed. CONSTITUTION:A P-type GaAs buffer layer 11, a P-type Al0.3Ga0.7As cladding layer 12, a P-type GaAs active layer 13 and an N-type Al0.3Ga0.7As cladding layer 14 are formed on a semi-insulating substrate 10 by molecular beam epitaxial growth and AuGe/Au is evaporated to form a cathode 15 of a semiconductor laser. Then a groove is formed around the resonator end surface of the semiconductor laser and the semiconductor laser by etching and, after that, metal 20 is evaporated over the whole surface. As the metal 20 is removed by anisotropic ion beam etching except the semiconductor part, the metal 20 is left on the side wall of the resonator end surface of the semiconductor laser 1 and serves as a reflective film coating and also shuts off the leakage of a light to electric elements and the like. Therefore, when a planar type optical integrated circuit is produced, the area of the chip is not ristricted by the resonator length of the semiconductor laser. |
| 公开日期 | 1987-06-10 |
| 申请日期 | 1985-11-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64111]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | UENOYAMA TAKESHI,SASAI YOICHI,KIMURA SOICHI,et al. Manufacture of optoelectronic integrated circuit. JP1987128586A. 1987-06-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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