Visible light semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | KONNO NOBUAKI; KIMURA TATSUYA |
| 发表日期 | 1992-10-13 |
| 专利号 | JP1992287995A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Visible light semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a visible light semiconductor laser having a window structure without externally diffusing Zn. CONSTITUTION:In this invention, an n-type AlGaInP lower clad layer 3, a GaInP active layer 4, a p-type GaInP buffer layer 6, and a p-type GaAs contact layer 7 are sequentially formed on an n-type GaAs substrate 1, a p-type GaAs layer 9 is formed on a region of an end face of a resonator through an n-type GaAs block layer 8, the layer 4 under the layer 9, i.e., the end face of the resonator is formed in a disordered window structure, thereby obtaining a window structure without thermal diffusion. |
| 公开日期 | 1992-10-13 |
| 申请日期 | 1991-02-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64113]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KONNO NOBUAKI,KIMURA TATSUYA. Visible light semiconductor laser and manufacture thereof. JP1992287995A. 1992-10-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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