Superlattice structure semiconductor device
文献类型：专利
| 作者 | MITSUYU TSUNEO; OKAWA KAZUHIRO; KARASAWA TAKESHI |
| 发表日期 | 1990-04-09 |
| 专利号 | JP1990096384A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Superlattice structure semiconductor device |
| 英文摘要 | PURPOSE:To obtain excellent electrical and optical performance by interposing a buffer layer composed of cadmium sulfide between an indium phosphide single crystal substrate and a superlattice layer. CONSTITUTION:A buffer layer 3 consisting of cadmium sulfide is epitaxially grown on an indium phosphide single crystal substrate 1, and a superlattice layer 2, in which thin-films 2a of zinc selenide and the thin layers 2b of zinc telluride are laminated alternately, is epitaxially-grown on the buffer layer 3. Consequently, the lattice constant of cadmium sulfide is made approximately the same as that of indium phosphide as the substrate, thus allowing excellent epitaxial growth. Accordingly, a flat uniform growth layer is acquired immediately after growth as the superlattice 2, and no lattice defect is generated, thus obtaining superior electrical and optical characteristics. |
| 公开日期 | 1990-04-09 |
| 申请日期 | 1988-10-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64117]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MITSUYU TSUNEO,OKAWA KAZUHIRO,KARASAWA TAKESHI. Superlattice structure semiconductor device. JP1990096384A. 1990-04-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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