Manufacture of semiconductor laser chip
文献类型：专利
| 作者 | SAKA AKIHIKO; TAKEUCHI HIDEO; YAMANAKA HARUYOSHI |
| 发表日期 | 1990-10-18 |
| 专利号 | JP1990257687A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser chip |
| 英文摘要 | PURPOSE:To reduce the generation of fine stepped cracks, and to improve yield by bending a semiconductor-laser crystal substrate along the linear edge section of a jig in the direction of cleavage along a cleavage flaw formed on the end face of the substrate and communicating with a rear from a surface. CONSTITUTION:A cleavage flaw 2 communicating with a rear from a surface is shaped to the end face of the crystal substrate 1 of a GaAlAs semiconductor laser, and held and fixed from both surfaces by an extensible sheet 3, the flaw 2 is formed along the linear edge section of a jig 4 along the direction of cleavage of the cleavage flaw 2, and the semiconductor laser crystal substrate 1 is bent vertically in the direction of cleavage. An optical axis is hardly displaced in a semiconductor laser chip acquired in this manner, and the displacement of the optical axis is concentrated near a central optical axis. Accordingly, fine stepped cracks are drastically reduced, thus improving characteristics. |
| 公开日期 | 1990-10-18 |
| 申请日期 | 1989-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64125]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | SAKA AKIHIKO,TAKEUCHI HIDEO,YAMANAKA HARUYOSHI. Manufacture of semiconductor laser chip. JP1990257687A. 1990-10-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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