Surface emitting semiconductor laser and method of fabricating the same
文献类型：专利
| 作者 | UEKI, NOBUAKI |
| 发表日期 | 2003-12-25 |
| 专利号 | US20030235226A1 |
| 著作权人 | FUJI XEROX CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emitting semiconductor laser and method of fabricating the same |
| 英文摘要 | A surface emitting semiconductor laser includes a substrate, a lower semiconductor multilayer mirror of a first conduction type formed on the substrate, an upper semiconductor multilayer mirror of a second conduction type, an active region disposed between the lower and upper semiconductor multilayer mirrors, a current confinement portion arranged between the lower and upper semiconductor multilayer mirrors, and a metal layer provided on the upper semiconductor multilayer mirror. A mesa structure is formed so as to include at least the upper semiconductor multilayer mirror, the current confinement portion and the metal layer. The mesa structure has a side surface aligned with the metal layer. |
| 公开日期 | 2003-12-25 |
| 申请日期 | 2003-02-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64133]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJI XEROX CO., LTD. |
| 推荐引用方式 GB/T 7714 | UEKI, NOBUAKI. Surface emitting semiconductor laser and method of fabricating the same. US20030235226A1. 2003-12-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。