Long wavelength surface-emitting semiconductor laser device and method for manufacturing the same
文献类型：专利
| 作者 | YOO, BYUENG-SU; KWON, O-KYUN; JU, YOUNG-GU |
| 发表日期 | 2002-06-20 |
| 专利号 | US20020075922A1 |
| 著作权人 | INTELLECTUAL DISCOVERY CO. LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Long wavelength surface-emitting semiconductor laser device and method for manufacturing the same |
| 英文摘要 | Disclosed is a surface-emitting laser device which eliminates an absorption loss of a p-type doped layer and reduces a scattering loss in a mirror layer and a carrier loss due to a current induction, comprising a first conductive type of semiconductor substrate; a bottom mirror layer formed on the semiconductor substrate and composed of a first conductive type of semiconductor layer; an active layer formed on the bottom mirror layer; an electron leakage barrier layer formed on the active layer and having an energy gap larger than the active layer; a current induction layer formed on the electron leakage barrier layer and a second conductive type of semiconductor layer; a current extension layer formed on the current induction layer and composed of the second conductive type of semiconductor layer; and a top mirror layer formed on the current extension layer, wherein the top mirror layer includes undoped center portion and its both end having the second conductive type of dopant diffusion region. |
| 公开日期 | 2002-06-20 |
| 申请日期 | 2001-04-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64136]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTELLECTUAL DISCOVERY CO. LTD. |
| 推荐引用方式 GB/T 7714 | YOO, BYUENG-SU,KWON, O-KYUN,JU, YOUNG-GU. Long wavelength surface-emitting semiconductor laser device and method for manufacturing the same. US20020075922A1. 2002-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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