Method for fabricating surface-emitting semiconductor device, surface-emitting semiconductor device fabricated by the method, and display device using the device
文献类型：专利
| 作者 | OUCHI, TOSHIHIKO |
| 发表日期 | 1999-02-10 |
| 专利号 | EP0896405A2 |
| 著作权人 | CANON KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for fabricating surface-emitting semiconductor device, surface-emitting semiconductor device fabricated by the method, and display device using the device |
| 英文摘要 | A surface-emitting semiconductor device is fabricated by a method comprising the steps of epitaxially growing, on a first substrate comprising a semiconductor, semiconductor layers having a semiconductor active layer capable of emitting light upon feed of an electric current; forming an electrode for feeding electric current to the semiconductor active layer; bonding the first substrate on which the semiconductor layers have been formed, to a second substrate with the former's semiconductor layer side inward; and removing the first substrate from the bonded substrates so as to leave the semiconductor layers on the second substrate. |
| 公开日期 | 1999-02-10 |
| 申请日期 | 1998-08-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64137]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | OUCHI, TOSHIHIKO. Method for fabricating surface-emitting semiconductor device, surface-emitting semiconductor device fabricated by the method, and display device using the device. EP0896405A2. 1999-02-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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