Zinc oxide-based compound semiconductor element
文献类型：专利
| 作者 | NAKAHARA, KEN; TAMURA, KENTARO |
| 发表日期 | 2006-09-28 |
| 专利号 | WO2006101157A1 |
| 著作权人 | ROHM CO., LTD |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Zinc oxide-based compound semiconductor element |
| 英文摘要 | This invention provides a zinc oxide-based compound semiconductor element that, even when a laminated layer part having a hetero junction to a ZnO-based compound semiconductor layer is formed to form a semiconductor element, does not cause a rise in drive voltage and, at the same time, can realize good crystallinity, and has excellent element characteristics. The zinc oxide-based compound semiconductor element includes a substrate (1) formed of MgxZn1-xO, wherein 0 ≤ x ≤ 0.5, of which the principal plane is a plane A (11-20) or a plane M (10-10). ZnO-based compound semiconductor single crystal layers (2) to (6) are epitaxially grown on the principal plane of the substrate (1) in such orientation that the plane parallel to the principal plane is { 11-20} plane or { 10-10} plane and the plane perpendicular to the principal plane is { 0001} plane. |
| 公开日期 | 2006-09-28 |
| 申请日期 | 2006-03-23 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64141]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD |
| 推荐引用方式 GB/T 7714 | NAKAHARA, KEN,TAMURA, KENTARO. Zinc oxide-based compound semiconductor element. WO2006101157A1. 2006-09-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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