Semiconductor material, photoelectric integrated circuit element, and crystal growth method of material
文献类型：专利
| 作者 | WATABE SHINICHI |
| 发表日期 | 1991-03-27 |
| 专利号 | JP1991072680A |
| 著作权人 | MITSUBISHI CABLE IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor material, photoelectric integrated circuit element, and crystal growth method of material |
| 英文摘要 | PURPOSE:To obtain semiconductor material wherein a GaAs or InP crystal layer of high quality is formed on an Si substrate, by arranging, directly or via a buffer layer, an Si or Si-Ge crystal layer on a GaAs or InP substrate. CONSTITUTION:GaAs based semiconductor material is formed as follows; an Si buffer layer 2 for lattice matching is formed on a GaAs substrate 1 by MOCJD and the like, and an Si crystal layer 3 is epitaxially grown on the buffer layer 2 by yo-yo solute supplying method. When a semiconductor device is constituted from said semiconductor material, the Si crystal layer 3 is used as an Si substrate, and the GaAs substrate 1 is used as a GaAs crystal layer. InP based semiconductor material is formed as follows; an Si buffer layer 2 is formed on an InP substrate 1, and further an Si crystal layer 3 is epitaxially grown by yo-yo solute supplying method. When a semiconductor device is made also from said material, an inverse mode is applied wherein the Si crystal layer 3 is used as an Si substrate, and the InP substrate 1 is used as an InP crystal layer. |
| 公开日期 | 1991-03-27 |
| 申请日期 | 1990-03-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64152]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CABLE IND LTD |
| 推荐引用方式 GB/T 7714 | WATABE SHINICHI. Semiconductor material, photoelectric integrated circuit element, and crystal growth method of material. JP1991072680A. 1991-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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