Diffraction grating and semiconductor laser
文献类型：专利
| 作者 | MIYAZAWA SEIICHI |
| 发表日期 | 1990-08-10 |
| 专利号 | JP1990201991A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Diffraction grating and semiconductor laser |
| 英文摘要 | PURPOSE:To provide easily a diffraction grating of a desired diffraction grating period by making a plurality kinds of diffraction grating materials perform an epitaxial growth after tilting them at a prescribed angle in an approximate orientation from a face {100} and further, by making them form each periodic structure. CONSTITUTION:If a crystal surface is cut by tilting it from a face {100} in an approximate orientation , combination of the face {100} with the face is obtained easily. As a period (d) of 97 in a figure is 1140Angstrom and molecular layers are formed one by one, the inclination angle 100 of a substrate crystal surface becomes 0.142 deg. by an expression theta=tan(h0/d), provided that the thickness h0 of an atomic layer is 2.8Angstrom and a period (d) is 1140Angstrom . Further, a diffraction grating is separated into an AlAs region 98 and a GaAs region 99 to form a periodic structure. The primary diffraction grating of a desired diffraction grating period is thus obtained. |
| 公开日期 | 1990-08-10 |
| 申请日期 | 1989-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64159]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | MIYAZAWA SEIICHI. Diffraction grating and semiconductor laser. JP1990201991A. 1990-08-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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