中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor integrated light source

文献类型:专利

作者YASAKA HIROSHI; YOSHIKUNI YUZO; KAWAGUCHI HITOSHI; OE KUNISHIGE
发表日期1988-04-19
专利号JP1988088883A
著作权人NIPPON TELEGR & TELEPH CORP
国家日本
文献子类发明申请
其他题名Semiconductor integrated light source
英文摘要PURPOSE:To obtain a semiconductor integrated light source which does not take much time to assemble its system, nor cause deviation of the alignment of an optical system, is not bulky in the system, has no delay of phase due to the length of a feedback system and can stabilize the frequency of light by integrally manufacturing a semiconductor laser, an optical fiber and an optical detector close to one another on the same substrate. CONSTITUTION:A semiconductor laser 10, an optical filter 20 having a semiconductor waveguide, and a photodetector 30 like a semiconductor photodetector are all manufactured in a series of semiconductor light source manufacturing process on the same substrate 40. That is, the filter 20 is formed of a pair of high reflecting films 24 formed oppositely to the laser 10 and the photodetector 30 at both sides of a semiconductor waveguide 22 so that the film 24 forms a pair of Fabry-Perot etalons. The laser 10 and the filter 30, and the filter 20 and the photodetector 30 are manufactured therebetween at intervals of several mum.
公开日期1988-04-19
申请日期1986-10-01
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/64162]  
专题半导体激光器专利数据库
作者单位NIPPON TELEGR & TELEPH CORP
推荐引用方式
GB/T 7714
YASAKA HIROSHI,YOSHIKUNI YUZO,KAWAGUCHI HITOSHI,et al. Semiconductor integrated light source. JP1988088883A. 1988-04-19.

入库方式: OAI收割

来源:西安光学精密机械研究所

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