Semicondutor laser device
文献类型：专利
| 作者 | TSUJI SHINJI; NAKAYAMA YOSHINORI; HIRAO MOTONAO; MORI TAKAO; MIZUISHI KENICHI; NAKAMURA MICHIHARU |
| 发表日期 | 1983-11-09 |
| 专利号 | JP1983192393A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semicondutor laser device |
| 英文摘要 | PURPOSE:To reduce the series resistance improving the linearity of optical output characteristics by a method wherein, when an embedding region with a refractive index less than that of an active region is provided on both sides of mesa semiconductor laminated region including an active layer, the conductive type of the first layer of an embedding semiconductor is made similar to that of the substrate. CONSTITUTION:The thin film laminated crystal layer comprising In0.71Ga0.29As0.61 P0.39 active layer 2, P type InP layer 3 is liquid epitaxially grown on N type InP substrate 1 and etched utilizing a mask comprising stripe type oxide film 7 to specify the value of the stripe width of the active layer 2. Next said layers 2, 3 are embedding grown to form an embedding crystal layer 41 comrising N type In0.88Ga0.12As0.25P0.75 as the first layer laminating P type InP layer 42 and N type InP layer 5 as the second layer. Through these procedures, the conductive type of the first layer 41 and the substrate 1 is made similar to each other reducing the series resistance and preventing the current leakage from the layer 41 to realize the linear optical output characteristics. |
| 公开日期 | 1983-11-09 |
| 申请日期 | 1982-05-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64167]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | TSUJI SHINJI,NAKAYAMA YOSHINORI,HIRAO MOTONAO,et al. Semicondutor laser device. JP1983192393A. 1983-11-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。