Light emitting element of compound semiconductor
文献类型：专利
| 作者 | TOMOMURA YOSHITAKA; KITAGAWA MASAHIKO; NAKANISHI KENJI |
| 发表日期 | 1991-02-25 |
| 专利号 | JP1991042881A |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Light emitting element of compound semiconductor |
| 英文摘要 | PURPOSE:To contrive high brightness and efficiency in a light emitting element by providing a bridge formation epitaxial layer consisting of ZnS and ZnSe in such a way that its layer has lattice distortion relaxation properties between a single crystal substrate and a pn-type epitaxial layer which are composed of ZnS or a mixed crystal consisting of ZnS and ZnSe, thereby forming a high grade light emitting layer in which its crystalline property is high and its impurities are controlled. CONSTITUTION:This element is composed of: a ZnS single crystal substrate 1; an n-type ZnS conducting layer 2 containing highly concentrated Al; an n-type ZnS conducting layer 3 containing low concentrated Al; an n-type ZnS-ZnSe superlattice layer 4; a pn junction-type ZnSe epitaxial layer 5; a positive electrode 9; and a negative electrode 10. In this element, the ZnS single crystal substrate 1 which is provided at a lower part of the pn junction-type ZnSe epitaxial layer 5 and the n-type ZnS epitaxial conductive layers 2 and 3 containing highly and low concentrated Al are transparent to an emitted light that is blue in color. Further, when the n-type ZnS-ZnSe superlattice layer 4 is made up with a prescribed layer thickness, ends of absorption are moved to the side of a wavelength shorter than that of ZnSe by quantum efficiency; besides, the film thickness of the layer 4 is so sufficiently thin that the light emitted is not absorbed very much and its light emitted can be taken out efficiently from the substrate side. |
| 公开日期 | 1991-02-25 |
| 申请日期 | 1989-07-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64172]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | TOMOMURA YOSHITAKA,KITAGAWA MASAHIKO,NAKANISHI KENJI. Light emitting element of compound semiconductor. JP1991042881A. 1991-02-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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