Manufacture of photoelectric integrated circuit
文献类型：专利
| 作者 | MUROTANI TOSHIO |
| 发表日期 | 1990-06-13 |
| 专利号 | JP1990153568A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of photoelectric integrated circuit |
| 英文摘要 | PURPOSE:To improve a photoelectric integrated circuit in manufacturing yield by a method wherein a high melting point metal layer is epitaxially formed as a mask on a required part of a substrate, and the metal layer film is partially etched to form an electrode. CONSTITUTION:A conductor region 9a is epitaxially formed in crystal through ion implantation on a II-V compound semiconductor substrate 1 of WSi or the like using a high melting point metal layer film as a mask, and the substrate 1 is etched to form an optical device forming recessed part 3. Then, the layer 20 is partially etched through an RIE method to form a gate electrode 10 of WSi after an optical device has been formed. The crystal of the region 9a where an electronic component is formed is kept good in state even after a prolonged heat treatment of high temperature, and a photoelectric integrated circuit composed of an optical device and an electronic circuit integrated together can be manufactured in high yield by the use of a WSi film which has little pinholes and stress. |
| 公开日期 | 1990-06-13 |
| 申请日期 | 1988-12-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64183]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MUROTANI TOSHIO. Manufacture of photoelectric integrated circuit. JP1990153568A. 1990-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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