Embedded semiconductor laser
文献类型：专利
| 作者 | SUZAKI SHINZO; ITO TATSUYA; SUEMATSU YASUHARU |
| 发表日期 | 1987-09-29 |
| 专利号 | JP1987221179A |
| 著作权人 | FUJIKURA DENSEN KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Embedded semiconductor laser |
| 英文摘要 | PURPOSE:To contrive not to increase the leakage current even at the time of injection of a high current and to attain a high optical output and a high efficiency in the titled semiconductor laser by a method wherein the laser is composed of a semiconductor substrate, a first buried layer which has a conductivity type opposite to that of the semiconductor substrate and a band gap energy smaller than that of a second buried layer, a second buried layer having a conductivity type opposite to that of the semiconductor substrate, and a third buried layer having the same conductivity type as that of the semiconductor substrate. CONSTITUTION:This semiconductor laser is constituted of a p-type InP substrate 1, an InGaAsP active layer 2, an n-type InP clad layer 3, an insulating film 6 and electrodes 7 and 8; and an n-type InGaAsP first buried layer 11, which is a semiconductor layer having the opposite conductivity type to the conductivity type of the substrate 1 and has a band gap energy smaller than that of an n-type InP second buried layer 12, is interposed between the substrate 1 and the second buried layer 12. A hetero transistor of a p-n-n-P structure is composed of the substrate 1, the buried layers 11 and 12 and a p-type InP third buried layer 13 and the gain is very small. Accordingly, the leakage current can be very lessened even at the time of injection of a high current and a large optical output can be obtained. |
| 公开日期 | 1987-09-29 |
| 申请日期 | 1986-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64189]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA DENSEN KK |
| 推荐引用方式 GB/T 7714 | SUZAKI SHINZO,ITO TATSUYA,SUEMATSU YASUHARU. Embedded semiconductor laser. JP1987221179A. 1987-09-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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