Selectively growing ii-vi compound semiconductor thin-film
文献类型：专利
| 作者 | YAMAZAKI KOJI |
| 发表日期 | 1989-07-19 |
| 专利号 | JP1989181536A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Selectively growing ii-vi compound semiconductor thin-film |
| 英文摘要 | PURPOSE:To make unnecessary a process of removing a II-VI compound semiconductor on a mask by using an organic compound of groups II and VI elements as a material at the time of epitaxial growth, and by selectively growing a II-Vi compound semiconductor thin-film so as to satisfy specific conditions. CONSTITUTION:In selectively growing a II-VI compound semiconductor thin-film 3 on the surface of a semiconductor substrate 1 having a mask 2 formed on a part of the surface of a semiconductor substrate 1 and made of a material different from that of a semiconductor substrate 1, organic compounds of groups II and VI elements are used as a material at the time of epitaxial growth of the II-VI compound semiconductor thin-film 3. What is more, semiconductor substrate temperatures are made 300-700 deg.C, a growth pressure 300Torr or less, the supply mole ratio 6 or less, and a growth speed 6mum or less per hour. This does not cause II-VI compound semiconductors to accumulate on a mask, thereby making unnecessary the etching process. Hence, this makes it possible to simplify the process at device manufacture time. |
| 公开日期 | 1989-07-19 |
| 申请日期 | 1988-01-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64193]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | YAMAZAKI KOJI. Selectively growing ii-vi compound semiconductor thin-film. JP1989181536A. 1989-07-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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