Semiconductor laser device with stabilized frequency
文献类型：专利
| 作者 | FUJITA TOSHIHIRO; OUYA JIYUN; MATSUI YASUSHI |
| 发表日期 | 1987-04-23 |
| 专利号 | JP1987089378A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device with stabilized frequency |
| 英文摘要 | PURPOSE:To contrive the shortening of a spectrum width and the stabilization of absolute frequency by using a semiconductor laser comprising an external resonator and an optical waveguide monolithically into one body and converting a frequency fluctuation of the laser beam into an intensity fluctuation by use of etalon, and accepting it by a detector and feeding back the accepted light signal to a semiconductor laser drive power source and a temperature controller electrically. CONSTITUTION:An emitted laser beam 20 of a semiconductor laser 18 comprising an optical waveguide 1 arranged along the optical axis direction of an active region 10 and being transparent to the oscillation wavelength of said region, and being provided with a laser resonator composed of cleavage planes 14 and 16 is nearly collimated by a lens 22. That beam passes through an isolator 24 to remove an influence of reflected light on the semiconductor laser and passes an etalon 26 comprising a proper free spectrum region (FSR). Then it is accepted by a detector 28. The accepted signal is fed back to a semiconductor laser drive power source 32 and a temperature controller 38 by feedback loops 30 and 40 so as to restrain a variation in intensity. |
| 公开日期 | 1987-04-23 |
| 申请日期 | 1985-10-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64197]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | FUJITA TOSHIHIRO,OUYA JIYUN,MATSUI YASUSHI. Semiconductor laser device with stabilized frequency. JP1987089378A. 1987-04-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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