Distributed feedback type semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | SUZAKI SHINZOU |
| 发表日期 | 1984-07-21 |
| 专利号 | JP1984126693A |
| 著作权人 | FUJIKURA DENSEN KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To continuously form an active layer and a clad layer by the time of epitaxial growth and thus improve the manufacturing yield by a method wherein a diffraction grating is provided by forming a mesa stripe on a substrate. CONSTITUTION:The projection mesa stripe 31 is formed by etching the surface of the substrate 30 of N-InP, etc. Next, the diffraction grating 32 is provided in parallel with a cleavage surface 4 Then, a layer 33 of GaInAsP, etc., the clad layer 35 of P-InP, etc., and a cap layer 36 of P-GaInAsP, etc. are grown. These layers can be successively grown by a time of liquid phase epitaxial growth. Thereafter, a Zn diffused region 39, and electrodes 40 and 42 are formed, thus completing a distributed feedback type semiconductor laser. |
| 公开日期 | 1984-07-21 |
| 申请日期 | 1983-01-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64202]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA DENSEN KK |
| 推荐引用方式 GB/T 7714 | SUZAKI SHINZOU. Distributed feedback type semiconductor laser and manufacture thereof. JP1984126693A. 1984-07-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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