Complex semiconductor laser
文献类型：专利
| 作者 | MATSUMOTO SHOHEI; FURUSE TAKAO |
| 发表日期 | 1986-12-11 |
| 专利号 | JP1986280693A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Complex semiconductor laser |
| 英文摘要 | PURPOSE:To provide an erasing function in addition to a reading function and a writing function while an optical system is kept simple by a method wherein at least two semiconductor lasers are formed on a same semiconductor substrate and the longitudinal position of the end surface of the resonator of at least one semiconductor laser is different from the positions of the end surfaces of the resonators of the other semiconductor lasers. CONSTITUTION:Two VSIS structure semiconductor lasers which have waveguide paths in which horizontal steps of effective refractive index are formed at the parts of two stripe shape grooves 3 and 4 are formed on a GaAs block layer 2 in parallel. Two etched mirror surfaces 141 and 142, whose positions to the longitudinal direction of resonators are different, are formed and, at the same time, electrical elements of the two semiconductor lasers are separated. After a mask of three-layer structure of AZ/Ti/AZ is removed in O2 plasma and CF4 plasma, negative side electrodes 9 and a positive side electrode 10 are formed. Finally, an integrated chip of a reading and writing semiconductor laser LD1 and an erasing semiconductor laser LD2, whose mirror surface positions are different from each other on the emission side of the resonators, is cut out by a method such as cleaving. |
| 公开日期 | 1986-12-11 |
| 申请日期 | 1985-06-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64217]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | MATSUMOTO SHOHEI,FURUSE TAKAO. Complex semiconductor laser. JP1986280693A. 1986-12-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。