Cycle gain type semiconductor laser element
文献类型：专利
| 作者 | TANETANI MOTOTAKA; ATSUNUSHI FUMIHIRO; OKUMURA TOSHIYUKI; TAKIGUCHI HARUHISA |
| 发表日期 | 1992-07-30 |
| 专利号 | JP1992209583A |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Cycle gain type semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a laser element, which is easy in manufacturing and favorable in cyclic frequency property, by forming a mesa drive with a specified width, the first clad layer, an active layer, the second clad layer, a current narrowing layer with a specified height, etc., on a substrate. CONSTITUTION:The first clad layer 103 of n-AlGaAs, where a wide part and a narrow part are made, and an AlGaAs nondoped active layer 104 are made on the mesa stripe 102, where a wide part and a narrow part are made with integer times of the half wavelength of the emitted light, on a GaAs substrate 101, and further the second clad layer 105 of p-AlGaAs and an n-AlGaAs current narrowing layer 106, whose height accords with the topside of the layer 104, are made on the side. Furthermore, a current does not flow to the part buried in the layer 106. By this constitution, a frequency gain type semiconductor laser element, which has the refractive index in accord with the emitted light wavelength and gives selective gain to the maximum amplitude of the generated light standing wave and is excellent in amplifying property, can be made simply. |
| 公开日期 | 1992-07-30 |
| 申请日期 | 1990-12-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64218]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | TANETANI MOTOTAKA,ATSUNUSHI FUMIHIRO,OKUMURA TOSHIYUKI,et al. Cycle gain type semiconductor laser element. JP1992209583A. 1992-07-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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