A method of fabricating a compositional semiconductor device
文献类型：专利
| 作者 | NÖTZEL, RICHARD; LEDENTSOV, N. NIKOLAI, DR.; DÄWERITZ, LUTZ, DR.SC.; PLOOG, KLAUS, DR. |
| 发表日期 | 1993-04-07 |
| 专利号 | EP0535293A1 |
| 著作权人 | MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | A method of fabricating a compositional semiconductor device |
| 英文摘要 | A method of fabricating a compositional semiconductor device comprising a quantum well wire or quantum dot superlattice structure, in particular a device selected from the group comprising lasers, photodiodes, resonant tunnelling transistors, resonant tunneling diodes, far infrared detectors, far infrared emitters, high electron mobility transistors, solar cells, optical modulators, optically bistable devices and bipolar transistors, by epitaxial growth of the superlattice structure on a semiconductor substrate, is characterised in that the epitaxial growth is effected on a {311}, {211}, {111} or {110} substrate, and that the devices preferably have length and width dimensions less than 500 Å and especially less than 300 Å. |
| 公开日期 | 1993-04-07 |
| 申请日期 | 1992-01-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64229]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V. |
| 推荐引用方式 GB/T 7714 | NÖTZEL, RICHARD,LEDENTSOV, N. NIKOLAI, DR.,DÄWERITZ, LUTZ, DR.SC.,et al. A method of fabricating a compositional semiconductor device. EP0535293A1. 1993-04-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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