High speed optical element
文献类型:专利
作者 | MATSUEDA HIDEAKI; NAKATSUKA SHINICHI; HARA KIYOAKI |
发表日期 | 1988-04-28 |
专利号 | JP1988097923A |
著作权人 | HITACHI LTD |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | High speed optical element |
英文摘要 | PURPOSE:To shorten fall time without sacrificing a rise, excitation efficiency, etc., by executing epitaxy of multiple quantum wells at a low temp. and introducing an interface level of a short relaxation time into the titled element. CONSTITUTION:The multiple quantum wells 6 are formed by growing GaAs well layers 3 and Ga0.7Al0.3As barrier layer 4 alternately many times at the low temp. A substrate 1 is then partly etched off by a chemical soln. or ion beam, etc., to expose a buffer layer 2, by which windows 7 to be inputted with light are provided. Then, the quantity of transmitted light increases sharply with the certain threshold of the quantity of incident light as a boundary, and an on state is attained. The on state continues until the much smaller quantity of the incident light is attained and thereafter the quantity of transmitted light decreases sharply and the off state is attained when the quantity of incident light decreases to a certain quantity of bellow in the case of decreasing the quantity of incident light. Optical bistability is thus obtd. The response speed is thereby increased and the rise time and fall time are shortened. The degradation in the excitation efficiency is obviated. |
公开日期 | 1988-04-28 |
申请日期 | 1986-10-15 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/64233] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | HITACHI LTD |
推荐引用方式 GB/T 7714 | MATSUEDA HIDEAKI,NAKATSUKA SHINICHI,HARA KIYOAKI. High speed optical element. JP1988097923A. 1988-04-28. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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