Semiconductor laser device and its production method
文献类型：专利
| 作者 | MIZUOCHI, HITOSHI, C/O MITSUBISHI DENKI K.K. |
| 发表日期 | 1994-03-30 |
| 专利号 | EP0589200A1 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and its production method |
| 英文摘要 | A semiconductor laser device (100) includes a Zn-doped p type semiconductor substrate (1a) in which more than 81% of Zn dopant atoms are activated to produce carriers, and semiconductor layers epitaxially grown on the Zn-doped p type semiconductor substrate (1a), including an active layer (2a) sandwiched between n type and p type cladding layers (15a,11a). Therefore, during the epitaxial growth of the semiconductor layers, diffusion of inactive Zn atoms from the substrate (1a) to the semiconductor layers is reduced, with the result that the internal loss due to free carrier absorption in the active layer (2a) and the underlying p type cladding layer (11a) is reduced and non-radiative recombinations of carriers in the active layer (2a) are reduced. |
| 公开日期 | 1994-03-30 |
| 申请日期 | 1993-08-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64237]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | MIZUOCHI, HITOSHI, C/O MITSUBISHI DENKI K.K.. Semiconductor laser device and its production method. EP0589200A1. 1994-03-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。