Surface light-emission type semiconductor laser
文献类型：专利
| 作者 | IWASAKI TAMOTSU; IKOMA TOSHIAKI; OKUMURA JITOKU |
| 发表日期 | 1985-12-06 |
| 专利号 | JP1985246689A |
| 著作权人 | FURUKAWA DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface light-emission type semiconductor laser |
| 英文摘要 | PURPOSE:To form a reflective surface having excellent evenness and high reflectivity with superior controlability by forming an active layer in multilayer structure, in which two layers or more of active unit layers consisting of second conduction layers, i layers and first conduction type layers are laminated, and shaping a reflecting layer for a resonator formed by a specific solid-phase reaction product. CONSTITUTION:An active layer 32 having multilayer structure in which three layers of active unit layers containing an n type intermediate clad layer 22 an a p type surface clad layer 30 and consisting of n type layers 22, 25, 28, i layers 23, 26, 29 and p type layers 24, 27, 30 are laminated is constituted onto a substrate 21, and circular windows 34 are shaped to an SiO2 film 33 on a cap layer 3 A negative electrode 36 is formed on the back of the substrate 2 Opeing sections 39 are shaped to the negative electrode 36 and the substrate 2 A resist film 37 is removed, and Pt films 40a, 40b are each evaporated onto an upper surface and a lower surface. A resist pattern 38 is removed, and solid-phase reaction products 41a are formed on the interface between the cap layer 31 and the Pt layer 40a and solid-phase reaction products 41b on the interfaces between the intermediate clad layer 22 and the Pt layers 40b respectively through a solid-phase reaction. |
| 公开日期 | 1985-12-06 |
| 申请日期 | 1984-05-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64239]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | IWASAKI TAMOTSU,IKOMA TOSHIAKI,OKUMURA JITOKU. Surface light-emission type semiconductor laser. JP1985246689A. 1985-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。