A semi conductor laser device
文献类型：专利
| 作者 | TAKIGUCHI, HARUHISA; KANEIWA, SHINJI; KUDO, HIROAKI; SAKANE, CHITOSE; YOSHIDA, TOSHIHIKO |
| 发表日期 | 1991-05-08 |
| 专利号 | EP0275209A3 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | A semi conductor laser device |
| 英文摘要 | A semiconductor laser device comprising a double-heterostructure having an active layer (3) and a pair of cladding layers (2,8) sandwiching the active layer (3) therebetween, and a stripe structure, disposed on the double-heterostructure, the stripe structure being composed of a current blocking layer (5) having a conductive type different from that of the adjacent cladding layer (8), and the current blocking layer (5) having a striped channel (50) constituting a current path, wherein the cladding layer (8) that contacts the current blocking layer (5) is composed of an Inl-sGasPl-tAst crystal material, wherein 0.51 ≦ s ≦ 1, 0 ≦ t ≦ 1 and s=2.04t - 04. |
| 公开日期 | 1991-05-08 |
| 申请日期 | 1988-01-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64242]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TAKIGUCHI, HARUHISA,KANEIWA, SHINJI,KUDO, HIROAKI,et al. A semi conductor laser device. EP0275209A3. 1991-05-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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