Method for forming electrode of semiconductor device
文献类型：专利
| 作者 | WATANABE TSUTOMU; SUZAKI SHINJI; KATSUTA HIROHIKO |
| 发表日期 | 1991-01-14 |
| 专利号 | JP1991006816A |
| 著作权人 | FUJIKURA LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for forming electrode of semiconductor device |
| 英文摘要 | PURPOSE:To form electrodes having large adhesive properties by plating electrode metal with a secondary metal layer formed on an insulating film except an electrode forming part as a mask and to prevent a defect due to generation of gas from a resist material by removing a primary metal layer except the electrode formed part, and the alloying a board material and the primary metal layer, and forming the secondary metal layer on the layer. CONSTITUTION:A primary metal layer 14 made of Sn, Au, etc., is formed on whole electrode forming part 12 and insulating layer 13. The layer 14 except the part 12 is removed, and the layer 14 and a substrate material such as InP crystal are alloyed to form an alloy layer 15. Thus, the electric resistance is reduced. A secondary metal layer 16 is formed on the whole layers 15 and 13. The Au part of the upper layer 16b of the layer 16 is coated with a resist layer 17 except the part 12 on the layer 16. The same Au electrode metal 18 is plated on the layer 16 of the part 12, thereby forming electrode bumps. The layer 17 and unnecessary secondary metal layer 16 are removed by etching. |
| 公开日期 | 1991-01-14 |
| 申请日期 | 1989-06-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64252]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA LTD |
| 推荐引用方式 GB/T 7714 | WATANABE TSUTOMU,SUZAKI SHINJI,KATSUTA HIROHIKO. Method for forming electrode of semiconductor device. JP1991006816A. 1991-01-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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