Distributed feedback semiconductor laser diode
文献类型：专利
| 作者 | MIYAZAWA TAKEO; MIKAMI OSAMU; KAWAMURA YUICHI; NAGANUMA MITSURU |
| 发表日期 | 1990-10-02 |
| 专利号 | JP1990246290A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback semiconductor laser diode |
| 英文摘要 | PURPOSE:To make possible the high efficiency of a laser oscillation by a method wherein the title diode is formed in such a way that an active layer and waveguide layers are respectively formed at a non-mixed crystallized region and a mixed crystallized of a semiconductor layer, in which a quantum well is formed. CONSTITUTION:An active layer 4 and waveguide layers 5L and 5R are respectively formed at a non-mixed crystallized region 14 and mixed crystallized regions 15 of a semiconductor layer, in which a quantum well is formed. In this case, the region 14 has a superlattice constitution, in which semiconductor crystal layers 4a and 4b having an energy band gap different form one another are repeatedly laminated alternately and in order one time or a plurality of times. Moreover, the regions 15 have a form that elements constituting the layers 4b and 4a are respectively introduced in the layers 4a and 4b in the superlattice constitution through the respective semiconductor crystal layers 4b and 4b. Thereby, a laser oscillation is obtained at a high efficiency with expected good characteristics. |
| 公开日期 | 1990-10-02 |
| 申请日期 | 1989-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64256]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | MIYAZAWA TAKEO,MIKAMI OSAMU,KAWAMURA YUICHI,et al. Distributed feedback semiconductor laser diode. JP1990246290A. 1990-10-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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