Heterostructure, injector laser, semiconductor amplifying element and a semiconductor optical amplifier a final stage
文献类型：专利
| 作者 | SHVEYKIN, VASILY IVANOVICH |
| 发表日期 | 2009-06-11 |
| 专利号 | US20090147812A1 |
| 著作权人 | GENERAL NANO OPTICS LIMITED |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Heterostructure, injector laser, semiconductor amplifying element and a semiconductor optical amplifier a final stage |
| 英文摘要 | The heterostructures are used for creation of semiconductor injection emission sources: injection lasers, semiconductor amplifying elements, semiconductor optical amplifiers that are used in fiber optic communication and data transmission systems, in optical superhigh-speed computing and switching systems, in development of medical equipment, laser industrial equipment, frequency-doubled lasers, and for pumping solid-state and fiber lasers and amplifiers. The heterostructure, the injection laser, the semiconductor amplifying element, and the semiconductor optical amplifier are proposed, the essential distinction of which consists in modernization of the active region and the leak-in region of the heterostructure, combined choice of location, compositions, refractive indices and thicknesses of the heterostructure layers providing the efficient functioning of the injection lasers, the semiconductor amplifying elements and the semiconductor optical amplifiers in the transient region of formation of controllable emission leak from the active layer. |
| 公开日期 | 2009-06-11 |
| 申请日期 | 2005-11-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64258]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GENERAL NANO OPTICS LIMITED |
| 推荐引用方式 GB/T 7714 | SHVEYKIN, VASILY IVANOVICH. Heterostructure, injector laser, semiconductor amplifying element and a semiconductor optical amplifier a final stage. US20090147812A1. 2009-06-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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