Junction semiconductor light emitting device
文献类型：专利
| 作者 | TADATOMO KAZUYUKI; TANIGUCHI KOICHI; ITO AKIRA |
| 发表日期 | 1989-07-12 |
| 专利号 | JP1989175777A |
| 著作权人 | RES DEV CORP OF JAPAN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Junction semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain a junction semiconductor light emitting device which may be easily pro duced as a semiconductor laser or light emitting diode, and enhanced for current injection efficiency to an active layer in order to realize high brightness and is of good heat radiation, by a structure wherein a groove is so formed in an insulating layer as to expose a semiconduc tor substrate from one end to the other end, and strip-like semiconductor layers including the active layer are so formed as to cover the groove, and so forth. CONSTITUTION:An insulating layer 1 is formed on one side of a semiconductor substrate B, and a groove 7 is so formed in the insulating layer 1 as to expose the semiconductor substrate B from one end to the other end, and further strip-like semiconductor layers 2-4 including an active layer are so formed on the insulating layer 1 as to cover the groove 7. And an upper electrode E1 and a lower electrode E2 which is opposite in polarity to the upper electrode E1 are formed on the semiconductor layer 4 and the other side of the semicon ductor substrate B, respectively. For example, an insulating layer 1 is formed on an n-type GaAs substrate B, a slender groove 7 which exposes the substrate B from one end to the other end is formed in the insulating layer Next, an n-type AlGaAs clad layer 2, an n-type AlGaAs active layer 3 and a p-type Al-GaAs layer 4 are in this order so formed on the insulating layer 1 as to cover the groove 7. Subsequently, a p-side electrode E1 and an n-side electrode E2 are formed thereon, respectively. |
| 公开日期 | 1989-07-12 |
| 申请日期 | 1987-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64259]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RES DEV CORP OF JAPAN |
| 推荐引用方式 GB/T 7714 | TADATOMO KAZUYUKI,TANIGUCHI KOICHI,ITO AKIRA. Junction semiconductor light emitting device. JP1989175777A. 1989-07-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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