Manufacture of light-emitting element
文献类型：专利
| 作者 | NARISAWA TADASHI |
| 发表日期 | 1990-07-25 |
| 专利号 | JP1990188980A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of light-emitting element |
| 英文摘要 | PURPOSE:To obtain a blue laser element, etc., by applying to a II-VI compound semiconductor, etc., so that the electron beam excitation method may be applied to compactly and while eliminating an improper influence due to heat by directly irradiating electron beam radiated from an electric field radiation type electron source to an active layer which makes the semiconductor etc. as an active substance for excitation. CONSTITUTION:An electron beam radiated from an electric field radiation type electron source 6 is directly irradiated to an active layer 3 which makes a semiconductor or other solid bodies as an active substance for excitation. For example, an n-type ZnSe (Thickness: 0.1mum) active layer 3 is subjected to epitaxial growth by the MOVPE method, MBE method, etc, on a p-type on, n-type high-doped GaAs substrate 1 through an n-type ZnS (Thickness: 1mum) cladding layer 2. Then, the active layer a and multi-chip electric field radiation type electron sources 6 and 7 are placed opposingly through an insulation film 4 which is a vacuum space 8, leaving only the periphery and scooping out the inside, thus achieving excitation and emission of light of the active layer 3 by electron beam radiated by electric field applied between them. |
| 公开日期 | 1990-07-25 |
| 申请日期 | 1989-01-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64261]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | NARISAWA TADASHI. Manufacture of light-emitting element. JP1990188980A. 1990-07-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。