Apparatus for liquid epitaxal growth
文献类型：专利
| 作者 | OKUDA SHINYA |
| 发表日期 | 1988-05-19 |
| 专利号 | JP1988114120A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Apparatus for liquid epitaxal growth |
| 英文摘要 | PURPOSE:To eliminate an inconvenience that a material used previously during an epitaxial growth is mixed thereby to obtain a crystal having stable composition by providing a liquid reservoir which can be and removed from a supporting base, and filling an exclusive epitaxial layer forming material in the reservoir. CONSTITUTION:A recess is formed on a supporting base 21, a slide member 41 is formed to have liquid reservoirs formed of a bottom plate 37 engaged with the recess, bottom plates 28A, 28B having upper holes, and four side plates 31A, 38 mounted on the bottom plate in such a manner that two opposed side plates 31A, 38 are crossed over the base 21, and the reservoirs are formed in an assembling structure that the independent reservoirs can be individually separately or removed. The independent reservoirs 26, 27 are formed in structures which contain only the same epitaxial layer forming material. Thus, it can prevent the epitaxial forming materials laminated in a multilayer structure from being mixed as a defect. |
| 公开日期 | 1988-05-19 |
| 申请日期 | 1986-10-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64273]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | OKUDA SHINYA. Apparatus for liquid epitaxal growth. JP1988114120A. 1988-05-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。