Semiconductor element and semiconductor laser element
文献类型：专利
| 作者 | KONO TOSHIHIRO; ONO YUICHI; NAKATSUKA SHINICHI |
| 发表日期 | 1989-10-25 |
| 专利号 | JP1989268082A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor element and semiconductor laser element |
| 英文摘要 | PURPOSE:To make the carrier density distribution in the direction of a film thickness in a P layer uniform and to make the controllability of the distribution excellent, by a constitution wherein an N-type semiconductor layer is doped with group II acceptor impurities and group IV doner impurities, and a P-type semiconductor layer is doped with said group II acceptor impurities. CONSTITUTION:In a III-V compound semiconductor element having a P-N junction, an N-type semiconductor layer 7 is doped with group II acceptor impurities and group IV doner impurities. P-type semiconductor layers 6 and 5 are doped said group II acceptor impurities. For example, the following layers are sequentially laminated on an N-GaAs substrate 1: an N-GaAs buffer layer 2; an N- GaAlAs clad layer 3; multiple quantum well active layers 4; the Zn-doped P- GaAlAs clad layer 5, the Zn-doped P-GaAlAs low Al-concentration layer 6 and the N-GaAs current blocking layer 7 which is doped with Si and Zn. Thereafter, the current blocking layer 7 is removed in a stripe shape. Then, a P- GaAlAs embedded layer 8 and a P-GaAs cap layer 9 are laminated. |
| 公开日期 | 1989-10-25 |
| 申请日期 | 1988-04-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64274]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KONO TOSHIHIRO,ONO YUICHI,NAKATSUKA SHINICHI. Semiconductor element and semiconductor laser element. JP1989268082A. 1989-10-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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