Buried type semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | IRITA TAKESHI; INOUE TAKESHI; YAMAGUCHI AKIRA |
| 发表日期 | 1992-03-12 |
| 专利号 | JP1992079283A |
| 著作权人 | HIKARI KEISOKU GIJIYUTSU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried type semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To make a burying growth smoothly by utilizing the plane of [110] as a growth stop plane. CONSTITUTION:An n-type buffer layer 2, an n-type clad first layer 3 and a p-type current block layer which are layer structure and include a current block layer, are arranged to make a growth on a (100) n-type GaAs substrate Then, a groove 11 is formed on a stripe which penetrates the p-type current block layer 4 in the direction of . In succession with this, n-type clad first layers 15 and 25 are arranged to grow inside and outside the groove 11 by the MOVPE technique. After the growth, active layers 16 and 26 are adapted to make a crystal growth under the state where a crystal growth is at a halt on the plane of [110]. A p-type clad layer 7 is arranged to further grow on the active layers 16 and 26 so that the whole planes may be continued, which provides a p-i-n type double heterostructure in the upper part and the lower part of the groove 11 and a p-i-n-p-n structure on the side of the groove 1 This construction makes it possible to concentrate electric current to the active layer 16 in the groove 1 A p-type cap layer 8 is installed on the p-type clad layer 7, which makes it possible to grow a flat layer selectively, using the growth stop by the crystal plane. |
| 公开日期 | 1992-03-12 |
| 申请日期 | 1990-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64278]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI KEISOKU GIJIYUTSU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | IRITA TAKESHI,INOUE TAKESHI,YAMAGUCHI AKIRA. Buried type semiconductor laser and manufacture thereof. JP1992079283A. 1992-03-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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