Manufacture of semiconductor device and manufacture of semiconductor laser
文献类型：专利
| 作者 | WATANABE MINORU; OKAJIMA MASASUE |
| 发表日期 | 1992-05-01 |
| 专利号 | JP1992130687A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device and manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser in which flatness of a hetero boundary is enhanced by employing a compound semiconductor substrate inclined from a plane (100) in a direction in a plane (011) in a special range. CONSTITUTION:A double hetero structure in which a first clad layer 11 made of InGaAlP, an active layer, a second clad layer are sequentially formed, or a quantum well structure in which a first clad layer 13, a first optical guide layer 12, a single or multiple quantum well 13, a second optical guide layer 15, and a second clad layer 16 are sequentially formed is formed on a compound semiconductor substrate 10 inclined from a plane (100) in a direction in a plane (011) in a range of 10-40 deg.. Thus, a high gain semiconductor laser having a hetero boundary including excellent flatness and excellent uniformity of compositions of composing materials, can be obtained. |
| 公开日期 | 1992-05-01 |
| 申请日期 | 1990-09-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64279]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | WATANABE MINORU,OKAJIMA MASASUE. Manufacture of semiconductor device and manufacture of semiconductor laser. JP1992130687A. 1992-05-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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