Semiconductor laser device and modulation method thereof
文献类型：专利
| 作者 | WATANABE HITOSHI; FUJIWARA MASATOSHI; NAKAJIMA YASUO; SAKAKIBARA YASUSHI |
| 发表日期 | 1991-04-25 |
| 专利号 | JP1991101182A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and modulation method thereof |
| 英文摘要 | PURPOSE:To prevent a fluctuation of an oscillation wavelength by embedding an active layer near a laser beam emission region and forming clad layers of a p-type and an n-type with the activated layer in between to provide a laser modulation region where currents can be injected independently. CONSTITUTION:Active layers 3a are embedded on the both sides of an active layer 1a of a laser beam emission region P-type clad layers 3b thereon and n-type clad layers 3c thereunder are formed respectively to provide laser modulation regions 3. When the currents injected through contacts 4 into the regions 3 are modulated, the refractive indexes of the layers 3a vary and an optical output signal subjected to predetermined modulation is obtained by changing the light intensity distribution from the layer 1a. Since the modulation can be thus performed keeping the currents injected into the laser beam emission region 1 via contacts 2 constant, the modulation signal having a good quality and having no fluctuation of its oscillation wavelength can be obtained. |
| 公开日期 | 1991-04-25 |
| 申请日期 | 1989-09-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64282]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | WATANABE HITOSHI,FUJIWARA MASATOSHI,NAKAJIMA YASUO,et al. Semiconductor laser device and modulation method thereof. JP1991101182A. 1991-04-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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