External resonator type laser
文献类型：专利
| 作者 | HANDA YUICHI; NISHIMURA MICHIYO |
| 发表日期 | 1991-06-20 |
| 专利号 | JP1991145174A |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | External resonator type laser |
| 英文摘要 | PURPOSE:To improve a semiconductor laser in both wavelength selectively and diffraction efficiency and to facilitate the manufacture of it by a method wherein a polarizing element is interposed between the semiconductor laser and a grating. CONSTITUTION:A part of a light wave emitted from a semiconductor laser 1 is emitted from an edge coated with an AR coat 6, and is incident on a blaze grating 4 passing through a coupling lens 2 and a half-wave plate 5. At this point, the intensity of a light wave between the coupling lens 2 and the half-wave plate 5 is distributed in such manner that its electrical field E1 faces in the minor axis direction of an elliptical beam. On the other hand, the intensity of a light wave that has passed through the half-wave plate 5 is distributed in such manner that its electrical field E2 is rotated by an angle of 90 deg. in a polarization direction and faces in the major axis direction of the elliptical beam. As mentioned above, the electrical field of a light wave incident on the grating 4 is parallel with the incident plane of the grating 4 or a light wave is incident on the grating 4 as p-polarized. A light wave diffracted as p-polarized is rotated by an angle of 90 deg. in a polarization direction through the half-wave plate 5 and has the same polarization direction that it has when emitted, which is recoupled with the semiconductor laser By this setup, a grating can be improved in both diffraction efficiency and wavelength selectivity. |
| 公开日期 | 1991-06-20 |
| 申请日期 | 1989-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64284]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | HANDA YUICHI,NISHIMURA MICHIYO. External resonator type laser. JP1991145174A. 1991-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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