Supporting device for semiconductor laser diode bar
文献类型:专利
作者 | NAGAI SEIICHI; MIYAUCHI JIYUNJI; SOGOU TOSHIO; TAKAMIYA SABUROU; NITSUTA SHIGEYUKI |
发表日期 | 1982-12-14 |
专利号 | JP1982204193A |
著作权人 | MITSUBISHI DENKI KK |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Supporting device for semiconductor laser diode bar |
英文摘要 | PURPOSE:To obtain a supporting device for a semiconductor laser diode bar available for forming a multilayer reflecting film with good workability, by providing a container constituted of a receiving vessel and holding plate having projections and a supporting means to support containers superposed in a plurality. CONSTITUTION:The container 12 constituted of the silicon wafer receiving vessel 8 having long and narrow groove 8a and a plurality of grooves 8b, 8c to install the laser diode bar 6 and of silicon wafer holding plate 9 having the projection 9a to hold the laser diode bar 6 and a plurality of projections installed in the groove of the receiving vessel and the supporting means 11 to support this plurality of containers by superposing are provided. Then, the multilayer reflecting film B is formed on the cleavage surface of the laser diode bar 6 through a window 8d formed between the receiving vessel 8 and holding plate 9. Besides, the grooves 8a, 8b, 8c of the receiving vessel 8 and projections 9a, 9b of the holding plate 9 are respectively formed by a photo engraving and etching techniques. |
公开日期 | 1982-12-14 |
申请日期 | 1981-06-10 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/64285] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI DENKI KK |
推荐引用方式 GB/T 7714 | NAGAI SEIICHI,MIYAUCHI JIYUNJI,SOGOU TOSHIO,et al. Supporting device for semiconductor laser diode bar. JP1982204193A. 1982-12-14. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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